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Composite Transistors
XN04504 (XN4504)
Silicon NPN epitaxial planar type
For amplification of low-frequency output
4 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6
Unit: mm
0.16+0.10 -0.06
1.50+0.25 -0.05
0.30+0.10 -0.05 0.50+0.10 -0.05 10
Basic Part Number
* 2SD1328 x 2
1.1+0.2 -0.1
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC ICP PT Tj Tstg
25 20 12 0.5 1 300 150 -55 to +150
V V V A A mW C C
1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74
0 to 0.1
Parameter
Symbol
Rating
Unit
Marking Symbol: 5X Internal Connection
4 5 6
Tr2
1.1+0.3 -0.1
Absolute Maximum Ratings Ta = 25C
(0.65)
* Two elements incorporated into one package * Reduction of the mounting area and assembly cost by one half
3
2
1
4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package
Tr1
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistance *2
*1
3
Conditions Min 25 20 12
2
Typ
1
Max Unit V V V 100 nA V V MHz pF
Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron
IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 20 mA IC = 0.5 A, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
200 60 0.13
800
0.40 1.2
200 10 1.0
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement 1 k *2: Ron test circuit
IB = 1 mA VB VV VB x 1 000 () VA - VB f = 1 kHz V = 0.3 V
VA
Ron =
Note) The part number in the parenthesis shows conventional part number.
SJJ00078BED
0.40.2
Features
2.8+0.2 -0.3 5
Publication date: February 2004
1
XN04504
PT Ta
500
IC VCE
IB = 4.0 mA Ta = 25C 3.5 mA 3.0 mA 0.8 2.5 mA 2.0 mA 0.6 1.5 mA 0.4 1.0 mA 0.5 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 25
1.2
Total power dissipation PT (mW)
400
1.0
300
Collector current IC (A)
10
1
200
Ta = 75C 10-1 25C -25C
100
0.2
0
0
40
80
120
160
0
0
1
2
3
4
5
6
10-2 10-2
10-1
1
10
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
102 IC / IB = 10
1 200
hFE IC
VCE = 2 V
fT I E
400 350 VCB = 10 V Ta = 25C
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
Transition frequency fT (MHz)
1 000
10
300 250 200 150 100 50
800 Ta = 75C 600 25C -25C
25C 1
Ta = -25C 75C
400
10-1
200
10-2 10-2
10-1
1
10
0 10-2
10-1
1
10
0 -1
-10
-102
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
24 f = 1 MHz IE = 0 Ta = 25C
20
16
12
8
4
0
1
10
102
Collector-base voltage VCB (V)
2
SJJ00078BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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